Effects of N2+ ion implantation on phase transition in Ge2Sb2Te5 films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2357640
Reference19 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Overview and the Future of Phase-Change Optical Disk Technology
3. A Review of Optical Disk Systems with Blue-Violet Laser Pickups
4. New developments in optical phase-change memory
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1. Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2023-06-20
2. Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge1Sb2Te4;Journal of Materials Chemistry C;2022
3. Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5;Nanomaterials;2021-06-30
4. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01
5. Crystallization behavior of N -doped Ge-rich GST thin films and nanostructures: An in-situ synchrotron X-ray diffraction study;Microelectronic Engineering;2021-05
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