Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge1Sb2Te4-Reference-Cited by-同舟云学术

Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge₁Sb₂Te₄

Published:2022 Issue:10 Volume:10 Page:3971-3979
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Bing¹²^ORCID,Wang Guanjie¹²^ORCID,Zhu Linggang¹²^ORCID,Zhou Jian¹²^ORCID,Sun Zhimei¹²^ORCID

Affiliation:

1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China

2. Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 00191, China

Abstract

The concentration-sensitive nitrogen-doping effects on both the stability and electrical resistivity of GST124 are understood through various configurations of N dopants.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05970J

Reference59 articles.

1. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

2. Phase Change Materials and Their Application to Nonvolatile Memories

3. Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film

4. Phase change memories: State-of-the-art, challenges and perspectives

5. Phase-change materials for rewriteable data storage

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