Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film-Reference-Cited by-同舟云学术

Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film

Published:2019-03 Issue:3 Volume:9 Page:035131
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

liu Bin¹^ORCID,Hu Shuwei¹^ORCID,Zhou Jian¹,Sun Zhimei¹^ORCID

Affiliation:

1. School of Materials Science and Engineering and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China

Funder

National key research and development program of china

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5092633

Reference28 articles.

1. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

2. Phase-change materials for non-volatile photonic applications

3. Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

4. Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material

5. Peierls distortion mediated reversible phase transition in GeTe under pressure

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