Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application-Reference-Cited by-同舟云学术

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Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application

Published:2023-06-20 Issue:3 Volume:93 Page:425-431
ISSN:0369-8203
Container-title:Proceedings of the National Academy of Sciences, India Section A: Physical Sciences
language:en
Short-container-title:Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci.

Author:

Asirvatham Joshua,Walczak Lukasz,Kanjilal Aloke^ORCID

Funder

UGC-DAE Consortium for Scientific Research, University Grants Commission

Department of Science and Technology, Government of India

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

https://link.springer.com/content/pdf/10.1007/s40010-023-00832-0.pdf

Reference22 articles.

1. Sebastian A, Le Gallo M, Burr GW, Kim S, BrightSky M, Eleftheriou E (2018) Tutorial: brain-inspired computing using phase-change memory devices. J Appl Phys 124(11):111101

2. Wuttig M, Yamada N (2007) Phase-change materials for rewriteable data storage. Nat Mater 6(11):824–832

3. Loke D, Lee T, Wang W, Shi L, Zhao R, Yeo Y, Chong T, Elliott S (2012) Breaking the speed limits of phase-change memory. Science 336(6088):1566–1569

4. Kim T, Lee S (2020) Evolution of phase-change memory for the storage-class memory and beyond. IEEE Trans Electron Dev 67(4):1394–1406

5. Ielmini D (2008) Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses. Phys Rev B 78(3):035308

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