Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1−xGex/Si heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368748
Reference38 articles.
1. Structure, properties and applications of GexSi1-xstrained layers and superlattices
2. 91 GHz SiGe HBTs grown by MBE
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