Noise in strained Si MOSFETs for low-power applications
Author:
Publisher
IOP Publishing
Subject
Statistics, Probability and Uncertainty,Statistics and Probability,Statistical and Nonlinear Physics
Reference14 articles.
1. Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices
2. High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
3. A low-power low-voltage OTA-C sinusoidal oscillator with a large tuning range
4. Monolithic micropower amplifier using SiGe n-MODFET device
5. Low-Voltage CMOS subthreshold log-domain filtering
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The causes of GaN HEMT bell-shaped transconductance degradation;Solid-State Electronics;2016-12
2. Effect of the gate scaling on the analogue performance of s-Si CMOS devices;Semiconductor Science and Technology;2011-08-16
3. Analysis of RF noise performance of Si/SiGe pseudomorphic MOSFETs;2009 Spanish Conference on Electron Devices;2009-02
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