Author:
Chen Chung-Hsu,Sadler Robert,Wang Dave,Hou Daniel,Yang Yuefei,Yau Wing,Sutton William,Shim JeoungChill,Wang Shiguang,Duong Ai
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Linearity improvement of GaN HEMT for wireless communication applications;Inoue;SEI Tech Rev Number,2014
2. A new empirical nonlinear model for HEMT and MESFET devices;Angelov;IEEE Trans Microw Theory Techn,1992
3. High-performance integrated dual-gate AlGaN/GaN enhancement-mode transistor;Bin;IEEE Electron Dev Lett,2010
4. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and of 370GHz;Yue;IEEE Electron Dev. Lett.,2012
5. Physics-based modeling of GaN HEMTs;Vitanov;IEEE Trans Electron Dev,2012
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