Sub-THz Response of Strained-Silicon MODFETs-Reference-Cited by-同舟云学术

Sub-THz Response of Strained-Silicon MODFETs

Published:2017-10-25 Issue:4 Volume:215 Page:1700475
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Delgado-Notario Juan A.¹,Javadi Elham¹²,Calvo-Gallego Jaime¹,Diez Enrique¹,Meziani Yahya M.¹,Velázquez-Pérez Jesús E.¹^ORCID,Fobelets Kristel³

Affiliation:

1. USAL NanoLab Salamanca University; C/Espejo, 2, Edificio I+D+i E-37007 Salamanca Spain

2. School of Electrical and Computer Engineering University of Tehran; 1417466191 Tehran Iran

3. Department of Electrical and Electronic Engineering Imperial College London South Kensington Campus; Exhibition Road London SW7 2AZ UK

Funder

Ministerio de Economía y Competitividad

FEDER/Junta de Castilla y León Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700475/fullpdf

Reference24 articles.

1. Material configurations forn-type silicon-based terahertz quantum cascade lasers

2. Tunable, continuous-wave Terahertz photomixer sources and applications

3. A review of terahertz sources

4. Terahertz technology

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1. Responsivity enhancement of a strained silicon field-effect transistor detector at 03 THz using the terajet effect;Optics Letters;2021-06-21

2. Improvement of a Terahertz Detector Performance Using the Terajet Effect in a Mesoscale Dielectric Cube: Proof of Concept;physica status solidi (RRL) – Rapid Research Letters;2020-03-03