High‐field thermal noise of holes in silicon: The effect of valence band anisotropy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363805
Reference15 articles.
1. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
2. Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials
3. Cryogenic cooling of mixers for millimeter and centimeter wavelengths
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3. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGexheterostructures;Semiconductor Science and Technology;2000-03-01
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