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Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN

  • Published:2005-02-04 Issue:3 Volume:20 Page:279-285
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Starikov E,Shiktorov P,Gružinskis V,Reggiani L,Varani L,Vaissière J C,Palermo C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterodyne mixing in self-local oscillator plasmonic diodes;Solid-State Electronics;2022-08

2. Comprehensive Studies on Steady-State and Transient Electronic Transport in In0.52Al0.48As;Journal of Electronic Materials;2021-04-15

3. Electronic noise of warm electrons in semiconductors from first principles;Physical Review Materials;2021-04-06

4. Diffusion properties of electrons in GaN crystals subjected to electric and magnetic fields;Semiconductor Physics, Quantum Electronics and Optoelectronics;2018-12-03

5. Drift and diffusion high-field magneto-transport in GaN;Journal of Physics: Conference Series;2017-10
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