Temperature and excitation power dependence of photoluminescence from high quality GaSb grown on AlSb and GaSb buffer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3082009
Reference23 articles.
1. Energy Band Structure and Lattice Constant Chart of III-V Mixed Semiconductors, and AlGaSb/AlGaAsSb Semiconductor Lasers on GaSb Substrates
2. Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
3. GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy
4. The physics and technology of gallium antimonide: An emerging optoelectronic material
5. Photoluminescence of high‐quality GaSb grown from Ga‐ and Sb‐rich solutions by liquid‐phase epitaxy
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