Photoluminescence of high‐quality GaSb grown from Ga‐ and Sb‐rich solutions by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352216
Reference26 articles.
1. Growth properties of GaSb: The structure of the residual acceptor centres
2. Electroluminescence in Liquid‐Phase Epitaxial GaSb Diodes
3. Ion-pairing between lithium and the residual acceptors in GaSb
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5. Residual acceptors in natural GaSb and Gaxln1−xSb; their contribution to transport between 4.7 and 300 °K
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