High-quality GaNAs∕GaAs quantum wells with light emission up to 1.44μm grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2084337
Reference17 articles.
1. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
2. Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
3. Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy
4. GaInNAs quantum well structures for 1.55μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
5. 1.55 μm emission from GaInNAs with indium-induced increase of N concentration
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4. Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications;IET Optoelectronics;2009-12-01
5. Dilute nitrides and 1.3μm GaInNAs quantum well lasers on GaAs;Microelectronics Journal;2009-03
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