Dilute nitrides and 1.3μm GaInNAs quantum well lasers on GaAs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference26 articles.
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1. Quantum-Well Lasers and Their Applications;Reference Module in Materials Science and Materials Engineering;2016
2. Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm;Journal of Alloys and Compounds;2015-10
3. Growth of dilute nitrides and 1.3 µm edge emitting lasers on GaAs by MBE;physica status solidi (b);2011-04-07
4. Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation;Semiconductor Science and Technology;2011-02-25
5. Quantum-Well Lasers and Their Applications;Comprehensive Semiconductor Science and Technology;2011
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