1.55 μm emission from GaInNAs with indium-induced increase of N concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1606886
Reference21 articles.
1. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
2. Temperature dependence of laser threshold in an InGaAsN vertical-cavity surface-emitting laser
3. Electrically pumped 10 Gbit∕s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
4. Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
5. Nonlinear dependence of N incorporation on In content in GaInNAs
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1. The effect of nitrogen on the diamagnetic susceptibility of a donor in quantum well under the magnetic field;Superlattices and Microstructures;2010-09
2. Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering;Thin Solid Films;2008-06
3. Electronic and Optical Properties of 1.55 µm GaInNAs/GaAs Quantum-Well Structures;Japanese Journal of Applied Physics;2007-01-10
4. Optical gain of InGaAsN∕InP quantum wells for laser applications;Applied Physics Letters;2006-10-30
5. Influence of N incorporation on In content in GaInNAs∕GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2006-08-14
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