Comparison and origin of electronic states of the free GaAs (100) surface and the GaAs/CaF2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346989
Reference9 articles.
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4. Band bending and interface states for metals on GaAs
5. Low-temperature formation of metal/molecular-beam epitaxy-GaAs(100) interfaces: Approaching ideal chemical and electronic limits
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A New Class of Gallium Arsenide Transistor: Realization Through a Molecular Designed Insulator;Materials Synthesis and Characterization;1997
2. A Fetish for Gallium Arsenide;MRS Proceedings;1995
3. Effects of Surface Orientation and Molar Ratio of(SrxCay)F2Films on Electrical Characteristics of Metal/Fluoride/GaAs Structures;Japanese Journal of Applied Physics;1994-09-15
4. Gallium Arsenide Transistors: Realization Through a Molecularly Designed Insulator;Science;1994-03-25
5. Calcium fluoride thin films on GaAs(100) for possible metal‐insulator‐semiconductor applicationsa);Applied Physics Letters;1993-02-22
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