Calcium fluoride thin films on GaAs(100) for possible metal‐insulator‐semiconductor applicationsa)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108545
Reference21 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
2. Formation of schottky barriers on GaAs(110): from adsorbate-lnduced gap states to interface metallicity
3. Improvement of the Interface Properties of Fluoride/GaAs(100) Structures by Postgrowth Annealing
4. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
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2. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors;Journal of Applied Physics;2018-03-29
3. Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy;Journal of Applied Physics;2016-11-14
4. Structure and luminescent properties of electrodeposited Eu3+-doped CaF2 thin films;Thin Solid Films;2014-07
5. Electrodeposition and characterization of CaF2 and rare earth doped CaF2 films;Thin Solid Films;2011-07
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