Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

Published:2016-11-14 Issue:18 Volume:120 Page:185305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Kexiong¹,Liao Meiyong²,Sumiya Masatomo²,Koide Yasuo²^ORCID,Sang Liwen¹

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Japanese science and technology agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4967394

Reference33 articles.

1. Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

2. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

3. Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates

4. Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

5. Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

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1. InGaN-based nanowires development for energy harvesting and conversion applications;Journal of Applied Physics;2021-03-28

2. Self-powered ultraviolet photodetector based on CuGaO/ZnSO heterojunction;Journal of Materials Science;2020-04-27

3. Band alignments of sputtered dielectrics on GaN;Journal of Physics D: Applied Physics;2019-12-12

4. High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states;Journal of Physics D: Applied Physics;2018-12-21

5. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors;Journal of Applied Physics;2018-03-29

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