A Fetish for Gallium Arsenide

Abstract

ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [(tBu)GaS]4, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulating properties of cubic-GaS make it suitable as a the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).