Electronic passivation ofn‐ andp‐type GaAs using chemical vapor deposited GaS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109970
Reference21 articles.
1. Perspectives on III–V compound MIS structures
2. Interface state band between GaAs and its anodic native oxide
3. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors
4. Unpinned (100) GaAs surfaces in air using photochemistry
5. Langmuir–Blodgett film passivation of unpinnedn‐type gallium arsenide surfaces
Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thin-film materials for space power applications;Photovoltaics for Space;2023
2. Commercialization of single-source precursors: Applications, intellectual property, and technology transfer;Nanomaterials via Single-Source Precursors;2022
3. Advanced Solar Energy Conversion Technologies Enabled by Novel (Nano)Materials and Processing for Space Power with Potential for Terrestrial Applications;12th International Energy Conversion Engineering Conference;2014-07-25
4. Synthesis and Phase Evolutions in Layered Structure of Ga2S3 Semiconductor Thin Films on Epiready GaAs (111) Substrates;ACS Applied Materials & Interfaces;2014-01-13
5. Gallium: Inorganic ChemistryBased in part on the article Gallium: Inorganic Chemistry by Andrew R. Barron which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.;Encyclopedia of Inorganic and Bioinorganic Chemistry;2011-12-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3