Band bending and interface states for metals on GaAs-Reference-Cited by-同舟云学术

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Band bending and interface states for metals on GaAs

Published:1988-06-13 Issue:24 Volume:52 Page:2052-2054
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Viturro R. E.,Shaw J. L.,Mailhiot C.,Brillson L. J.,Tache N.,McKinley J.,Margaritondo G.,Woodall J. M.,Kirchner P. D.,Pettit G. D.,Wright S. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.99578

Reference28 articles.

1. Formation of Schottky barrier at the Tm/GaAs(110) interface

2. Formation of Schottky barrier at the Tm/GaAs(110) interface

3. Formation of Schottky barrier at the Tm/GaAs(110) interface

4. Formation of Schottky barrier at the Tm/GaAs(110) interface

5. On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

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1. Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07

2. Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers;Applied Physics Letters;2005-12-12

3. Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions;Physical Review E;1997-08-01

4. Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium;Applied Surface Science;1996-09

5. Midgap states observed by nonlinear optical spectroscopy of metal:GaAs junctions;Applied Surface Science;1996-09

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