Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation-Reference-Cited by-同舟云学术

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Published:2016-01-11 Issue:2 Volume:108 Page:021107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lohrmann A.¹,Castelletto S.²^ORCID,Klein J. R.¹,Ohshima T.³,Bosi M.⁴,Negri M.⁴,Lau D. W. M.⁵,Gibson B. C.⁵,Prawer S.¹,McCallum J. C.¹,Johnson B. C.⁶^ORCID

Affiliation:

1. School of Physics, The University of Melbourne, Victoria 3010, Australia

2. School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia

3. SemiConductor Analysis and Radiation Effects Group, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan

4. IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy

5. ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, Victoria 3001, Australia

6. ARC Centre of Excellence for Quantum Computing and Communication Technology, School of Physics, University of Melbourne, Victoria 3010, Australia

Funder

Centre for Quantum Computation and Communication Technology, Australian Research Council

KAKENHI (B)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939906

Reference16 articles.

1. Isolated electron spins in silicon carbide with millisecond coherence times

2. Coherent control of single spins in silicon carbide at room temperature

3. A silicon carbide room-temperature single-photon source

4. Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles

5. Quantum-confined single photon emission at room temperature from SiC tetrapods

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