Temperature- and doping-dependent nanoscale Schottky barrier height at the Au/Nb:SrTiO3 interface
Author:
Affiliation:
1. CNR-SPIN, C.so F.M. Perrone 24, 16152 Genova, Italy
2. Physics Department, University of Genova, Via Dodecaneso 33, 16146 Genova, Italy
Funder
Ministero dell'Istruzione, dell'Università e della Ricerca
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5049635
Reference51 articles.
1. Modulation of resistance switching in Au/Nb:SrTiO3 Schottky junctions by ambient oxygen
2. Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
3. Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices
4. Temperature dependence of carrier transport and resistance switching inPt/SrTi1−xNbxO3Schottky junctions
5. Determination of Schottky barrier profile at Pt/SrTiO3:Nb junction by x-ray photoemission
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1. Resistive switching suppression in metal/Nb:SrTiO3 Schottky contacts prepared by room-temperature pulsed laser deposition;Journal of Physics D: Applied Physics;2024-07-05
2. Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics;Materials Science in Semiconductor Processing;2024-06
3. Phase-space ab-initio direct and reverse ballistic-electron emission spectroscopy: Schottky barriers determination for Au/Ge(100);Applied Surface Science;2023-01
4. Investigation of Temperature-Dependent Hard X-ray Photoemission Spectra on Au/Nb:SrTiO3 Schottky Junctions;The Journal of Physical Chemistry C;2021-07-05
5. Nondestructive Visualization of Interfacial Conducting Inhomogeneities in Memristive Oxides by Electroluminescence;Advanced Materials Interfaces;2020-11-30
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