Author:
Mikheev Evgeny,Hoskins Brian D.,Strukov Dmitri B.,Stemmer Susanne
Abstract
Abstract
Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Cited by
169 articles.
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