Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices-Reference-Cited by-同舟云学术

Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices

Published:2016 Issue:29 Volume:8 Page:13967-13975
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Baeumer C.¹²³^ORCID,Raab N.¹²³,Menke T.¹²³,Schmitz C.¹²³,Rosezin R.¹²³,Müller P.¹²³,Andrä M.¹²³,Feyer V.¹²³,Bruchhaus R.⁴⁵⁶,Gunkel F.¹²³⁷⁸,Schneider C. M.¹²³,Waser R.¹²³⁷⁸,Dittmann R.¹²³

Affiliation:

1. Peter Gruenberg Institute

2. Forschungszentrum Juelich GmbH and JARA-FIT

3. 52425 Juelich, Germany

4. Juelich Centre for Neutron Science at MLZ

5. Forschungszentrum Juelich

6. 85748 Garching, Germany

7. Institute of Materials in Electrical Engineering and Information Technology II

8. RWTH Aachen University

Abstract

We demonstrate that nanoscale redox reactions rather than purely electronic effects are responsible for resistive switching in Pt/Nb:SrTiO₃ junctions.

Funder

Helmholtz Association

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C6NR00824K

Reference41 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Resistive switching in transition metal oxides