Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3195684
Reference12 articles.
1. Optical Process for Liftoff of Group III-Nitride Films
2. Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
3. Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation
4. Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy
5. Nano-Processing Techniques Applied in GaN-Based Light-Emitting Devices With Self-Assembly Ni Nano-Masks
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