Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers-Reference-Cited by-同舟云学术

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Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

Published:2003-02 Issue:3 Volume:195 Page:516-522
ISSN:0031-8965
Container-title:physica status solidi (a)
language:
Short-container-title:phys. stat. sol. (a)

Author:

Darakchieva V.,Paskova T.,Paskov P. P.,Monemar B.,Ashkenov N.,Schubert M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fe-doped GaN grown on stirring-assisted Na-flux process GaN thick film and its application on Ohmic contact UV detector;Superlattices and Microstructures;2021-01

2. Preparation and optimization of freestanding GaN using low-temperature GaN layer;Frontiers of Materials Science;2019-07-01

3. Modulation of Electrical Conductivity and Lattice Distortions in Bulk HVPE-Grown GaN;ECS Journal of Solid State Science and Technology;2019

4. V-shaped pits in HVPE-grown GaN associated with columnar inversion domains originating from foreign particles of α-Si3N4 and graphitic carbon;Micron;2017-03

5. Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications;Journal of The Electrochemical Society;2017

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