Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications-Reference-Cited by-同舟云学术

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications

Published:2017 Issue:7 Volume:164 Page:H477-H483
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kumazaki Yusuke,Matsumoto Satoru,Sato Taketomo

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Electrochemistry and Photoetching of n-GaN

2. Band-Edge Potentials of n-Type and p-Type GaN

3. Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation

4. Photo-induced CO$_{2}$ Reduction with GaN Electrode in Aqueous System

5. Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells

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