Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3555450
Reference13 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
3. Axial and radial growth of Ni-induced GaN nanowires
4. Direct comparison of catalyst-free and catalyst-induced GaN nanowires
5. Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy
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