Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates-Reference-Cited by-同舟云学术

Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates

Published:2020 Issue:6 Volume:12 Page:4018-4029
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Shen Jian¹²³⁴⁵,Yu Yuefeng¹²³⁴⁶,Wang Jia⁷⁸⁹¹⁰¹¹,Zheng Yulin¹²³⁴⁶,Gan Yang⁵¹²¹³⁴^ORCID,Li Guoqiang¹²³⁴⁶^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640

4. China

5. School of Chemistry and Chemical Engineering

6. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province

7. Center for Integrated Research of Future Electronics

8. and Institute of Materials and Systems for Sustainability

9. Nagoya University

10. Nagoya 464-8601

11. Japan

12. Harbin Institute of Technology

13. Harbin 150001

Abstract

A lower Ga/In flux ratio and a high index sapphire plane favor MBE self-assembled growth of dense, uniform, and high-aspect-ratio InGaN nanorods.

Funder

National Basic Research Program of China

National Outstanding Youth Science Fund Project of National Natural Science Foundation of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR09767H

Reference65 articles.

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4. Dynamic scaling of the growth process of GaN thin films deposited on sapphire substrates by HVPE

5. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

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