Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

Published:2007-06-29 Issue:8 Volume:7 Page:2248-2251
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Calarco Raffaella¹,Meijers Ralph J.¹,Debnath Ratan K.¹,Stoica Toma¹,Sutter Eli¹,Lüth Hans.¹

Affiliation:

1. Institute of Bio- and Nanosystems (IBN-1) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich GmbH, D-52425 Jülich, Germany, and Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0707398

Reference15 articles.

1. Growth and transport properties of complementary germanium nanowire field-effect transistors

2. GaN nanowire lasers with low lasing thresholds

3. Logic Gates and Computation from Assembled Nanowire Building Blocks

4. Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires

5. Defect Distribution along Single GaN Nanowhiskers

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