Defect Distribution along Single GaN Nanowhiskers-Reference-Cited by-同舟云学术

Defect Distribution along Single GaN Nanowhiskers

Published:2006-06-13 Issue:7 Volume:6 Page:1548-1551
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Cavallini Anna¹,Polenta Laura¹,Rossi Marco¹,Richter Thomas¹,Marso Michel¹,Meijers Ralph¹,Calarco Raffaella¹,Lüth Hans¹

Affiliation:

1. Physics Department, University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy, and Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl060332n

Reference19 articles.

1. Crystallographic alignment of high-density gallium nitride nanowire arrays

2. GaN nanowire lasers with low lasing thresholds

3. Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires

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