High quality semipolar (11¯02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2. JFE Mineral Co. Ltd., Chiba 260-0826, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference21 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
3. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
4. Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
5. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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