Photoluminescence study of Al doping in GaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363588
Reference31 articles.
1. Study of electron traps inn‐GaAs grown by molecular beam epitaxy
2. Reduction and origin of electron and hole traps in GaAs grown by molecular-beam epitaxy
3. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
4. Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
5. State‐of‐the‐art AlGaAs alloys by antimony doping
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1. Photoluminesence study of undoped GaAs at temperatures 300 K and 77 K;Journal of Physics: Conference Series;2021-02-01
2. Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2009-12-21
3. Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys: magnetic resonance studies;Semiconductor Science and Technology;2005-12-16
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5. gallium aluminum arsenide (Ga(1-x)Al(x)As), shallow impurities and defects;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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