State‐of‐the‐art AlGaAs alloys by antimony doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337300
Reference15 articles.
1. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
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3. Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy
4. GaInP grown by molecular beam epitaxy doped with Be and Sn
5. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures
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