Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97119
Reference16 articles.
1. Study of electronic levels in antimony and indium‐doped gallium arsenide
2. Mechanism for dislocation density reduction in GaAs crystals by indium addition
3. Substrate effects on the threshold voltage of GaAs field‐effect transistors
4. Improvement of field‐effect transistor threshold voltage uniformity by using very low dislocation density liquid encapsulated Czochralski‐grown GaAs
5. High-quality GaAs Schottky diodes fabricated by strained layer epitaxy
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