Study of electron traps inn‐GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.322974
Reference16 articles.
1. Interface and doping profile characteristics with molecular‐beam epitaxy of GaAs: GaAs voltage varactor
2. GaAs MESFET prepared by molecular beam epitaxy (MBE)
3. GaAs IMPATT diodes prepared by molecular beam epitaxy
4. A study of electron traps in vapour-phase epitaxial GaAs
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