Abnormal electrical behavior and phase changes in implanted p+- and n+-Si channels under high current densities
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368802
Reference11 articles.
1. Electromigration in metals
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1. Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors;Applied Physics Letters;2003-10-06
2. Electromigration of Cu and Ti atoms and dopant junction profiles in the p+-Si implanted channel under high-density current;Materials Science in Semiconductor Processing;2001-02
3. Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator;Journal of Materials Research;2000-11
4. The failure mechanisms and phase formation for Ni, Co and Cu contacts on ion implanted ()Si under high current stress;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-06
5. Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress;Journal of Applied Physics;1999-12-15
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