Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4704179
Reference16 articles.
1. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
2. Negative capacitance to the rescue?
3. Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
4. Device and Architecture Outlook for Beyond CMOS Switches
Cited by 88 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature analysis of lead zirconate titanate GAA-NCFET nanowire with interface trap charges;Materials Science and Engineering: B;2024-09
2. Performance characterization of Ferroelectric GaN HEMT based biosensor;Microsystem Technologies;2024-07-24
3. Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation;Journal of Applied Physics;2024-04-05
4. Analysis of noise behavior and reliability of pocket doped negative capacitance FET under the impact of trap charges and temperature;Microelectronics Reliability;2024-01
5. A perspective on the building blocks of a solid-state battery: from solid electrolytes to quantum power harvesting and storage;Journal of Materials Chemistry A;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3