Author:
Sukharev Valeriy,Zschech Ehrenfried,Nix William D.
Subject
General Physics and Astronomy
Reference40 articles.
1. A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength
2. Effect of interface strength on electromigration-induced inlaid copper interconnect degradation: Experiment and simulation
3. P. S. Ho, K. D. Lee, E. T. Ogawa, S. Yoon, and X. Lu, inCharacterization and Metrology for ULSI Technology, AIP Conf. Proc. 683, edited by D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, S. Zollner, R. P. Khosia, and E. M. Secula (AIP, Melville, NY, 2003), pp. 533–539.
4. Electromigration reliability issues in dual-damascene Cu interconnections
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