Effect of interface strength on electromigration-induced inlaid copper interconnect degradation: Experiment and simulation-Reference-Cited by-同舟云学术

Effect of interface strength on electromigration-induced inlaid copper interconnect degradation: Experiment and simulation

Published:2005-09 Issue:9 Volume:96 Page:966-971
ISSN:0044-3093
Container-title:Zeitschrift für Metallkunde
language:en
Short-container-title:MEKU

Author:

Zschech Ehrenfried,Engelmann Hans-Jürgen,Meyer Moritz Andreas,Kahlert Volker,Vairagar Anand V.,Mhaisalkar Subodh G.,Krishnamoorthy Ahila,Yan Minyu,Tu K. N.,Sukharev Valeriy

Publisher

Walter de Gruyter GmbH

Subject

Metals and Alloys

Reference28 articles.

1. P.S. Ho, K.D. Lee, E.T. Ogawa, S. Yoon, X. Lu, in: Characterization and Metrology for ULSI Technology, D.G. Seiler (Eds.), AIP Conf. Proc. (AIP: Melville, NY, 2003) 533.

2. R. Spolenak, E. Zschech, in: K. Wetzig, C. M. Schneider (Eds.), Metal Based Thin Films for Electronics, Wiley-VCH Weinheim (2003) 7.

3. Electromigration reliability issues in dual-damascene Cu interconnections

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Electromigration-Induced Stress Evolution and Voiding in Cu Damascene Lines with Microstructure;Electromigration in Metals;2022-04-30

2. Stress Evolution and Damage Formation in Confined Metal Lines under Electric Stressing;Electromigration in Metals;2022-04-30

3. Effects of an interfacial layer on stress relaxation mechanisms active in the Cu-Si thin film system during thermal cycling;MRS Communications;2020-03

4. Physics-based simulation of EM and SM in TSV-based 3D IC structures;AIP Conference Proceedings;2014

5. Electromigration-induced void evolution in upper and lower layer dual-inlaid Copper interconnect structures;Advances in materials Research;2012-06-25