Effects of an interfacial layer on stress relaxation mechanisms active in the Cu-Si thin film system during thermal cycling

Author:

Somaiah Nalla,Kanjilal Anwesha,Kumar Praveen

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Reference26 articles.

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2. D. Shamiryan, T. Abell, F. Iacopi, and K. Maex: Low-k dielectric materials. Mater. Today 7, 34–39 (2004).

3. M.F. Dorner and W.D. Nix: Stresses and deformation processes in thin films on substrates. CRC Crit. Rev. Solid State Mater. Sci. 14, 225–267 (1988).

4. D. Fridline: Finite element modeling of electromigration and stress voiding in microelectronic interconnects. Ph.D. thesis, Brown University, 2001.

5. M.A. Korhonen, C.A. Paszkiet, and C.Y. Li: Mechanisms of thermal stress relaxation and stress induced voiding in narrow aluminum based metallizations. J. Appl. Phys. 69, 8083–8095 (1991).

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