New method to determine the carbon concentration in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97246
Reference11 articles.
1. The production and destruction of the C-related 969 meV absorption band in Si
2. Determination of low levels of carbon in Czochralski silicon
3. Carbon-related radiation damage centres in Czochralski silicon
4. Uniaxial stress measurements on the 0.97 eV line in irradiated silicon
5. New model of the irradiation-induced 0.97-eV (G) line in silicon: ACS−Si*complex
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