Photonic breakdown in up-conversion imaging devices based on the integration of quantum-well infrared photodetector and light-emitting diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1497453
Reference21 articles.
1. Solid‐State Infrared‐Wavelength Converter Employing High‐Quantum‐Efficiency Ge‐GaAs Heterojunction
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3. High-current InGaAsP-InP phototransistors and some monolithic optical devices
4. Quantum Well Infrared Photodetector with Optical Output
5. Integrated quantum well intersub-band photodetector and light emitting diode
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1. Contrast Transfer Characteristics of Integrated Images Based on Optoelectronic Integration between Quantum Well Photodetector and Light Emitting Diod;Arab Journal of Nuclear Sciences and Applications;2021-04-28
2. Pixelless image deformation characteristics due to optoelectronic integration between quantum well infrared phototransistor and light emitting diode;Optics & Laser Technology;2018-09
3. Infrared detection and photon energy up-conversion in graphene layer infrared photodetectors integrated with LEDs based on van der Waals heterostructures: Concept, device model, and characteristics;Infrared Physics & Technology;2017-09
4. Studies on carrier-blocking structures for up-conversion infrared photodetectors;Acta Physica Sinica;2015
5. Impurity complexes and conductivity of Ga-doped ZnO;Physical Review B;2011-08-01
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