Solid‐State Infrared‐Wavelength Converter Employing High‐Quantum‐Efficiency Ge‐GaAs Heterojunction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1709748
Reference7 articles.
1. Donor Diffusion into GaAs from Group VI Compounds
2. Some Characteristics of GaAs–Ge Epitaxy
3. Some Characteristics of GaAs–Ge Epitaxy
4. Indium Antimonide Photoelectromagnetic Infrared Detector
5. Opto‐Electric Effects in Ge‐GaAs p‐n Heterojunctions
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