Pixelless image deformation characteristics due to optoelectronic integration between quantum well infrared phototransistor and light emitting diode

Author:

El_Tokhy Mohamed S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Waveguide engineering of graphene optoelectronics—modulators and polarizers;Meng;IEEE Photon. J.,2018

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3. Theoretical analysis of transient behavior of optoelectronic integrated devices;Zhu;IEEE Transact. Electron Dev.,1995

4. V. Ahmadi, M.H. Sheikhi, M.K. Morawej-Farshi, Analysis of the optical gain and rise time of a QW-Structure optoelectronic integrated device, in: The 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, Scotland, 2000.

5. A new optoelectronic integrated device for light-amplifying optical switch (LAOS);Jit;IEEE Transact. Electron Dev.,2001

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