Reduction of interface‐state density by F2treatment in a metal‐oxide‐semiconductor diode prepared from a photochemical vapor deposited SiO2film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102292
Reference9 articles.
1. Photo-Induced Chemical Vapor Deposition of SiO2Film Using Direct Excitation Process by Deuterium Lamp
2. Low Temperature Growth of SiO2Thin Film by Double-Excitation Photo-CVD
3. SiO2Thin Film Prepared from Si3H8and O2by Photo-CVD Using Double Excitation
4. Growth of SiO2Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light
5. Effect of organic contaminants on the oxidation kinetics of silicon at room temperature
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