Growth of SiO2Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light-Reference-Cited by-同舟云学术

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Growth of SiO2Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light

Published:1988-11-20 Issue:Part 2, No. 11 Volume:27 Page:L2152-L2154
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inoue Kohji,Okuyama Masanori,Hamakawa Yoshihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate;Applied Surface Science;1998-06

2. Surface treatment effects on microscopic Si surface structure and SiSiO2 interface state;Applied Surface Science;1997-04

3. Characterization of Charged Traps nearSi–SiO2Interface in Photo-Induced Chemical Vapor DepositedSiO2Film;Japanese Journal of Applied Physics;1996-02-28

4. In Situ Detection of Surface SiHn in Synchrotron-Radiation-Induced Chemical Vapor Deposition of a-Si on an SiO2 Substrate;Journal of Synchrotron Radiation;1995-07-01

5. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

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