SiO2Thin Film Prepared from Si3H8and O2by Photo-CVD Using Double Excitation-Reference-Cited by-同舟云学术

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SiO2Thin Film Prepared from Si3H8and O2by Photo-CVD Using Double Excitation

Published:1987-06-20 Issue:Part 2, No. 6 Volume:26 Page:L908-L910
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okuyama Masanori,Fujiki Noriaki,Inoue Kohji,Hamakawa Yoshihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of SiO2 Films Deposited by VUV-CVD Using Organic Siloxane Gases;IEEJ Transactions on Electronics, Information and Systems;2003

2. Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate;Applied Surface Science;1998-06

3. Surface treatment effects on microscopic Si surface structure and SiSiO2 interface state;Applied Surface Science;1997-04

4. Compositional and electrical properties of Si metal–oxide–semiconductor structure prepared by direct photoenhanced chemical vapor deposition using a deuterium lamp;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-03

5. Photoluminescence of SiO2 films grown by photo-induced chemical vapor deposition;Applied Surface Science;1994-05

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