Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition-Reference-Cited by-同舟云学术

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Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition

Published:2005-01-21 Issue:No. 6 Volume:44 Page:L220-L223
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ming-Kwei,Shih Chung-Min,Chang Shu-Ming,Wang Hong-Chi,Huang Jung-Jie

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of post-annealing treatment on silicon dioxide films for passivating flexible organic light-emitting diode;Solid-State Electronics;2013-01

2. Effect of deposition temperature on the bonding configurations and properties of fluorine doped silicon oxide film;Thin Solid Films;2011-10

3. On the origin of leakage current reduction in TiO2 passivated porosus silicon Schottky-barrier diode;Applied Physics Letters;2010-02-08

4. Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide;Japanese Journal of Applied Physics;2009-08-20

5. Preparation, microstructure, and property characterizations of fluorinated polyimide–organosilicate hybrids;European Polymer Journal;2008-11

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